Nine cp-Ti grades 2 and 4 implants were used in the surface character analysis test. Three surface analysis tests were performed for implants of each cp-Ti grade: Field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), and confocal laser microscopy (CLSM). The FE-SEM (model S-4700, Hitachi, Tokyo, Japan) was used to capture several scaled images of each implant surface (n = 3). XPS (Sigma Probe, Thermo Fisher Scientific, Waltham, MA, USA) was used to identify the elemental content and quantify the atomic concentration of the tested surfaces; measurements were repeated three times for each specimen (n = 3). CLSM (LSM 800, Carl Zeiss AG, Oberkochen, Germany) was used to measure the surface topographical features of implant sides on three different areas (measurement area: 150 μm × 150 μm on a 200 × optically- and 3 × digitally-magnified image) for each specimen (n = 3). The images were filtered using a Gaussian low-pass filter with a cut-off wavelength of 80 µm. The average surface deviation (Sa) and developed surface area ratio (Sdr) were measured.
Sigma probe
Manufactured by Thermo Fisher Scientific
Sourced in United States, United Kingdom, Japan
The Sigma Probe is a versatile laboratory equipment designed for precise measurement and data collection. It features a high-accuracy sensor and a user-friendly interface for easy data recording and analysis. The Sigma Probe is suitable for a variety of laboratory applications that require accurate and reliable data.
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Lab products found in correlation
S 4800, by Hitachi (5 mentions)
Smartlab, by Rigaku (5 mentions)
Jem 2100f, by JEOL (4 mentions)
Lsm 800, by Zeiss (3 mentions)
S 4700, by Hitachi (3 mentions)
K alpha, by Thermo Fisher Scientific (3 mentions)
D max 2500, by Rigaku (2 mentions)
3flex, by Micromeritics (2 mentions)
Quantax 400, by Bruker (2 mentions)
Talos f200x, by Thermo Fisher Scientific (2 mentions)
Asap 2020, by Micromeritics (2 mentions)
Quanta 650 feg, by Thermo Fisher Scientific (2 mentions)
Jsm it100, by JEOL (2 mentions)
Tecnai g2 f30 s twin, by Thermo Fisher Scientific (2 mentions)
Quanta 250 feg, by Thermo Fisher Scientific (1 mentions)
Vk x250k, by Keyence (1 mentions)
Wbcs3000, by Wonatech (1 mentions)
Jsm 6701f, by JEOL (1 mentions)
Dxr2xi, by Thermo Fisher Scientific (1 mentions)
Su 70, by Hitachi (1 mentions)
49 protocols using sigma probe
1
Surface Characterization of Titanium Dental Implants
2
Surface Characterization of PCB-ImAg
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The surface morphology of the PCB-ImAg after immersion was determined by CLSM (VK-X250K, Keyence, Japan) and FESEM (QUANTA FEG 250, FEI, United States). The characteristics of the samples after immersion were measured using a focused ion beam (FIB, Zeiss, Germany). XPS (SigmaProbe, ThermoFisher, United States) and Raman micro-spectroscopy (CRS, inVia-Reflex, Renishaw, United Kingdom) were performed to determine the composition of the surface immersed in LB with and without B. cereus for 15 days. The XPS was equipped with an Al Kα monochromator and used a step size of 0.05 eV. The Raman spectra of the surface were recorded over 100–2000 cm−1 using laser excitation with a wavelength of 633 nm.
3
Electrical Characterization of Carbon Nanofilms
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FE-SEM images were obtained using
a JSM-6701F (JEOL Ltd., Japan). Raman spectra were obtained using
a DXR2xi (Thermo, USA) installed at NCIRF at Seoul National University.
XPS data were acquired using a Sigma Probe (Thermo, USA). The electrical
conductivity was measured using a Keitheley 2400, and the amount of
charge was recorded using an electrochemical workstation (WBCS3000,
WonATech, Korea). The electrodeposition and oxidation-level control
were performed using WBCS3000. The electrical conductivity, charge
carrier mobility, and charge carrier density were calculated using
the following equations.
The electrical conductivity was calculated
as where L represents the length, A represents the area of the CNF, and R represents
the resistance measured by the source meter.
The charge carrier
mobility was calculated as where n0 represents
the charge carrier density and |e| represents the
electrical charge of the carrier.
The charge carrier density
was calculated as where q represents the amount
of charge and V represents the volume of the nanofilm.
a JSM-6701F (JEOL Ltd., Japan). Raman spectra were obtained using
a DXR2xi (Thermo, USA) installed at NCIRF at Seoul National University.
XPS data were acquired using a Sigma Probe (Thermo, USA). The electrical
conductivity was measured using a Keitheley 2400, and the amount of
charge was recorded using an electrochemical workstation (WBCS3000,
WonATech, Korea). The electrodeposition and oxidation-level control
were performed using WBCS3000. The electrical conductivity, charge
carrier mobility, and charge carrier density were calculated using
the following equations.
The electrical conductivity was calculated
as where L represents the length, A represents the area of the CNF, and R represents
the resistance measured by the source meter.
The charge carrier
mobility was calculated as where n0 represents
the charge carrier density and |e| represents the
electrical charge of the carrier.
The charge carrier density
was calculated as where q represents the amount
of charge and V represents the volume of the nanofilm.
4
Electrical Characterization of HfO2-x Thin Films
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The current–voltage (I-V) characteristics of HfO2-x thin films were measured in a probe station using a Keithley 2400 digital source meter. In addition, XPS spectra were obtained with a Sigma Probe (Thermo Fisher Scientific, UK) and were calibrated using the binding energy of the C 1 s peak at 285.0 eV.
Local electrical properties were characterized by KPFM and cAFM using a commercial AFM (n-Tracer, NanoFocus Inc.) with a Pt/Ir-coated tip, PPP-EFM-50 (Nanosensor), for both contact and noncontact modes. Topography and surface potential images were simultaneously obtained. The scan speed was set to 0.5 Hz to minimize any topography-induced artifacts. KPFM signals were obtained by applying an AC voltage of 1.0 V at 61 kHz with an SR830 Lock-in Amplifier. The work function of the Pt/Ir tip was calibrated as 4.6 eV by using a cleaved highly ordered pyrolytic graphite reference sample. Local current maps were obtained by cAFM by applying sample biases up to ± 10 V between the tip and silver bottom electrode.
Local electrical properties were characterized by KPFM and cAFM using a commercial AFM (n-Tracer, NanoFocus Inc.) with a Pt/Ir-coated tip, PPP-EFM-50 (Nanosensor), for both contact and noncontact modes. Topography and surface potential images were simultaneously obtained. The scan speed was set to 0.5 Hz to minimize any topography-induced artifacts. KPFM signals were obtained by applying an AC voltage of 1.0 V at 61 kHz with an SR830 Lock-in Amplifier. The work function of the Pt/Ir tip was calibrated as 4.6 eV by using a cleaved highly ordered pyrolytic graphite reference sample. Local current maps were obtained by cAFM by applying sample biases up to ± 10 V between the tip and silver bottom electrode.
5
Characterization of VO2(M) Nanomaterials
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X-ray diffraction (XRD) measurements of the powder samples were taken with a Bruker D8-Advance using Cu Kα radiation in the 2θ range of 20 to 70°. Field-emission scanning electron microscopy (FESEM) images were taken by a Hitachi SU-70. High-resolution transmission electron microscopy (HRTEM) analysis, with energy-dispersive spectrometer (EDS) mapping, was conducted by a JEOL JEM-2100F. X-ray photoelectron spectroscopy (XPS) was performed with a Thermo Scientific Sigma Probe, using an Al Kα X-ray source. The amount of rGO content was measured by thermogravimetric analysis (TGA; DTG-60H, Shimadzu Co., Japan) under air atmosphere. The sample was heated at temperatures ranging from room temperature to 600 °C at 10 °C/min under air atmosphere. The three-dimensional visualization crystal structure of VO2(M) was illustrated using the VESTA program.
6
XPS Analysis of Carbon and Oxygen
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XPS (X-ray photoelectron spectroscopy) analysis was performed on the samples (<74 μm) with a ThermoVG Scientific Sigma Probe (Thermo Fisher ESCALAB 250Xi, Waltham, MA, USA) using a microfocusing monochromatic AlKa X-ray source at an operating pressure between 10–9 and 10–8 mbar. A high-resolution scan was conducted on the C1S peak from 280 to 300 eV and the O1S peak from 530 to 535 eV for each sample. The chemical bond analysis of carbon was performed by studying the fit of the C1S peak and deconvoluting it into four subpeaks for C-C/C=C, C-O, and C=O- groups, with areas represented by C1, C2, and C3, respectively. The O1S signals were similarly deconvoluted into two subpeaks for C=O and C-O groups and represented by O1 and O2, respectively. The ratio of C3/C2 and O1/O2 was calculated.
7
Ferroelectric Thin Film Characterization
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The high resolution X-ray photoemission spectroscopy (XPS) measurements were conducted using monochromatic X-ray source and spherical sector analyzer (SIGMA PROBE, ThermoFisher Scientific, U.K). The core level spectra peaks were fitted using a pseudo Voigt function (a convolution of 30% Lorentzian and 70% Gaussian functions) with the Shirley type baseline subtraction. The electrical measurements were conducted after wake-up process by inducing 10,000 pulse cycles of 3 V at a frequency of 10 kHz. Polarization–voltage (P–V) curves and time-dependent dynamic polarization switching (P(t)) were conducted using a ferroelectric tester (TF Analyzer 3000; aixACCT Systems GmbH, Aachen, Germany) and a semiconductor parameter analyzer (4200-SCS; Keithley Instruments, Cleveland, OH, USA). The P–V curves were measured with the voltage pulse frequency of 2 kHz. The dielectric constant as a function of voltage was measured with the ac voltage frequency and height of 10 kHz and 100 mV. an impedance analyzer (E4990A; Agilent, Palo Alto, CA). For STEM and EELS analyses, films were fabricated into thin lamella using a focused ion beam (FEI; Helios). The lamella was observed using an aberration-corrected Titan G2 microscope (60–300 kV) operating at 200 kV.
8
X-ray Photoelectron Spectroscopy Analysis of P2-type Sodium-Lithium-Manganese Oxide Cells
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XPS measurements were carried out using Sigma Probe (ThermoFisher Scientific, UK) with Al Kα (1486.8 eV) as the X‐ray source. Samples of the P2‐type Na0.6Li0.2Mn0.8O2 cells for XPS measurements were prepared in the same manner with ex situ sXAS. To avoid air exposure, coin cells were disassembled in Ar‐filled glove box, which was directly connected to XPS sample chamber. Each sample was analyzed after etching using Ar ion beam for about 60 s. Peaks were recorded with a constant pass energy of 20 eV. The binding energy scale was calibrated using the C 1s core peak at 284.6 eV from the Super P, which was used in the preparation of the electrodes. XPS O 1s spectra were analyzed using a Shirley‐type background and 70% Gaussian/30% Lorentzian line shapes. The peak positions and areas were optimized by a weighted least‐squares method.
9
Characterization and Photocatalytic Evaluation of MoS2/g-C3N4 Heterojunction
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We differentiated the well-constructed morphologies of the photoanode film using field-emission scanning electron microscopy (FE-SEM; model S4800, Hitachi, Japan), focused ion beam (FIB; model FB-2100, Hitachi, Japan) and transmission electron microscopy (TEM; model JEM-2100F, JEOL, Japan). To observe the crystalline structure and its properties, X-ray diffraction (XRD) using a Cu Kα source (model D/Max-2500/PC; Rigaku/USA Inc., USA) analysis was carried out on the MoS2 and g-C3N4 phases. Fourier transform infrared spectroscopy (FT-IR; model iS10; Thermo Fisher Scientific, UK) and X-ray photoelectron spectroscopy (XPS) using an Al Kα source (Sigma Probe; Thermo Fisher Scientific, UK) were used to confirm the formation of g-C3N4. Then, UV-VIS spectroscopy (model V650; JASCO, Japan) was used to observe the optical absorbance of the films so that we could calculate their band gap energy. Photoluminescence (PL; SC-100; Dongwoo, Korea) was employed to monitor the recombination rate of the as-prepared films at 325 nm laser excitation. All photocatalytic performance tests of transient photocurrents, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS) were carried out using a potentiostat (VersaSTAT 4; Princeton Applied Research, USA). The photocatalytic degradation solutions were measured by UV-VIS spectroscopy.
10
Surface Characterization of Dental Implants
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The implants’ surface was photographed by field emission-scanning electron microscopy (FE-SEM; S-4700, Hitachi, Tokyo, Japan). The element composition of each implant was performed by electron spectroscopy for the chemical analysis (ESCA; Sigma Probe, Thermo Scientific, Waltham, MA, USA). Surface parameters for the surface topography of the implants were measured by confocal laser scanning microscopy (CLSM; LSM 800, Carl Zeiss AG, Oberkochen, Germany). Each implant was analyzed at three different selected areas (top, middle, bottom), which were averaged and assigned to the representative value for one sample (top, [19 (link)]). (1) For the Sa (arithmetical mean height) value, the absolute values express the difference in the height of each point compared to the arithmetical mean of the surface. (2) The Sdr (developed interfacial area ratio) value shows the ratio between the definition area’s additional developed surface area and a flat definition area.
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